Chemical Bonds in Solids: Volume 4: Semiconductor Crystals, by O. G. Karpinskii, B. A. Evseev (auth.), Academician N. N.

By O. G. Karpinskii, B. A. Evseev (auth.), Academician N. N. Sirota (eds.)

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Calc. 1406 1349 1341 1284 1201 1165 ZnGa2Te, 1134 1181 1085 1130 991 1022 CdGa2Te, ligGa2Te, oK where Xi is the electronegativity of the element AU) ; (8Tmp 18(illc»)i is the derivative for the isoelectronic series of compounds corresponding to element i. Tables 2 and 3 list our calculated values of the melting points of defect phases of the type AIIB~IIOZ¥I and AIB~II02 ZXI. In the case of Tmp (AIIBi II OZlI) no correction is necessary for the ionicity: the isoelectronic substitutions are equivalent.

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D. Dudkin, N. I. Kiryukhina, and N. N. Trusova, Izv. Akad. Nauk SSSR, Neorg. , 4:325 (1968). B. K. Voronov, L. D. Dudkin, and N. N. Trusova, Kristallografiya, 12:519 (1967). M. G. Shirmazan and M. E. Dyatkina, Izv. Akad. Nauk SSSR, Otd. Khim. 9, p. 1553 (1959). B. I. Davydov and I. M. Shmushkevich, Usp. Fiz. Nauk, 24:21 (1940). C. A. Coulson, Valence, Oxford University Press, London (1961), p. 286. L. E. Orgel, Introduction to Transition-Metal Chemistry: Ligand-Field Theory, Methuen, London (1960), p.

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