By O. G. Karpinskii, B. A. Evseev (auth.), Academician N. N. Sirota (eds.)
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Additional resources for Chemical Bonds in Solids: Volume 4: Semiconductor Crystals, Glasses, and Liquids
Calc. 1406 1349 1341 1284 1201 1165 ZnGa2Te, 1134 1181 1085 1130 991 1022 CdGa2Te, ligGa2Te, oK where Xi is the electronegativity of the element AU) ; (8Tmp 18(illc»)i is the derivative for the isoelectronic series of compounds corresponding to element i. Tables 2 and 3 list our calculated values of the melting points of defect phases of the type AIIB~IIOZ¥I and AIB~II02 ZXI. In the case of Tmp (AIIBi II OZlI) no correction is necessary for the ionicity: the isoelectronic substitutions are equivalent.
Appl. , 36:669 (1965). J. C. Suits and B. E. Argyle, J. Appl. , 36:1251 (1965). V. K. Miloslavskii, E. N. Naboikina, and T. S. Kiyan, Fiz. Tekh. , 1:629 (1967). P. D. Fochs, Proc. Phys. Soc" London, B69:70 (1956). G. Busch, P. Junod, and P. Wachter, Phys. , 12:11 (1964). G. Busch, P. Junod, M. Risi, and O. Vogt, Proc. Sixth Intern. Conf. on Physics of Semiconductors, Exeter, England, 1962, publ. by The Institute of Physics, London (1962), p. 727. 3 InAs IN RELATION TO THE STRUCTURE OF THE ENERGY BANDS* , N.
D. Dudkin, N. I. Kiryukhina, and N. N. Trusova, Izv. Akad. Nauk SSSR, Neorg. , 4:325 (1968). B. K. Voronov, L. D. Dudkin, and N. N. Trusova, Kristallografiya, 12:519 (1967). M. G. Shirmazan and M. E. Dyatkina, Izv. Akad. Nauk SSSR, Otd. Khim. 9, p. 1553 (1959). B. I. Davydov and I. M. Shmushkevich, Usp. Fiz. Nauk, 24:21 (1940). C. A. Coulson, Valence, Oxford University Press, London (1961), p. 286. L. E. Orgel, Introduction to Transition-Metal Chemistry: Ligand-Field Theory, Methuen, London (1960), p.