Chemical Mechanical Polishing in Silicon Processing by R.K. Willardson and Eicke R. Weber (Eds.)

By R.K. Willardson and Eicke R. Weber (Eds.)

Considering that its inception in 1966, the sequence of numbered volumes referred to as Semiconductors and Semimetals has unusual itself throughout the cautious choice of recognized authors, editors, and participants. The Willardson and Beer sequence, because it is celebrated, has succeeded in generating various landmark volumes and chapters. not just did lots of those volumes make an effect on the time in their ebook, yet they remain well-cited years after their unique unlock. lately, Professor Eicke R. Weber of the collage of California at Berkeley joined as a co-editor of the sequence. Professor Weber, a well known specialist within the box of semiconductor fabrics, will additional give a contribution to carrying on with the sequence' culture of publishing well timed, hugely appropriate, and long-impacting volumes. many of the fresh volumes, reminiscent of Hydrogen in Semiconductors, Imperfections in III/V fabrics, Epitaxial Microstructures, High-Speed Heterostructure units, Oxygen in Silicon, and others promise that this practice could be maintained or even expanded.Reflecting the actually interdisciplinary nature of the sphere that the sequence covers, the volumes in Semiconductors and Semimetals were and should stay of serious curiosity to physicists, chemists, fabrics scientists, and machine engineers in smooth undefined.

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3. Schematic diagram of a third-generation, orbital CMP head. plate and the other under the flexible pad-backer assembly. A wide retaining ring is used to ensure the pad remains compressed during the entire polishing cycle. Controlling the pressure difference between the pad and the retaining ring optimizes uniformity in the edge exclusion region. 0 1 Std Pads SMSpeed Std Pads High Speed SM Pads High Speed Lower Temp I Single Pad F Single Pad FT Std Speed High Speed FIG. 4. Normalized planarization as a function of process.

13. N. Shendon, D. R. Smith, US. Patent #5,582,534, Dec. 10, 1996. 14. T. Bibby, A. Zutshi, Y. Gotkis, J. D. Lee, J. Yang, C. Barns, K. Holland, “Advantages of Orbital CMP Technology for Oxide and Metal Planarization,” presented at Semicon Taiwan, Hsinchu, Taiwan, Sept. 22-24, 1997. 2 EQUIPMENT 43 15. N. A. Hoshizaki, R. Williams, J. D. Buhler, C. A. Reichel, W. K. Hollywood, R. de Geuss, L. L. Lee, US. Patent #5,759,918, Jun. 2, 1998. 16. J. R. Breivogel, S. F. Louke, M. R. Oliver, L. D. Yau, C.

Barns, K. Holland, “Advantages of Orbital CMP Technology for Oxide and Metal Planarization,” presented at Semicon Taiwan, Hsinchu, Taiwan, Sept. 22-24, 1997. 2 EQUIPMENT 43 15. N. A. Hoshizaki, R. Williams, J. D. Buhler, C. A. Reichel, W. K. Hollywood, R. de Geuss, L. L. Lee, US. Patent #5,759,918, Jun. 2, 1998. 16. J. R. Breivogel, S. F. Louke, M. R. Oliver, L. D. Yau, C. E. S. Patent #5,554,064, issued Sept. 10, 1996. 17. A. R. Baker, “The Origin of the Edge Effect in Chemical Mechanical Planarization,” presented at the ECS Fall 1996 meeting, San Antonio, TX.

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