Chemical Properties and Analysis of Refractory Compounds / by E. E. Kotlyar, T. N. Nazarchuk (auth.), G. V. Samsonov

By E. E. Kotlyar, T. N. Nazarchuk (auth.), G. V. Samsonov (eds.)

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Additional info for Chemical Properties and Analysis of Refractory Compounds / Khimicheskie Svoistva I Metody Analiza Tugoplavkikh Soedinenii / Химические Свойства И Методы Анализа Тугоплавких Соединений

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HNOa (1:1) H2SO,conc. conc. HaPO, (1:1) HF conc. 5 - A similar kind of dissolution occurs in a mixture of sulfuric and nitric acids. We may suppose that in this case Ti0 2 or Ti(S04h is formed, and this then dissolves with the formation of titanyl sulfate TiOS04, which exists in acid solutions. In order to elucidate the composition of the white deposit we attempted to separate it from the main solution, but this proved impossible. Mter separation of the deposit on the Schott filter and washing with hot distilled water, the residue completely dissolved in the latter.

1/2 (1961). W. Espe, Zirconium Fussen (Bauern), 9:11 (1953). A. Jamagut and M. Otsuke, Z. anorg. allg. , 29:131 (1957). Z. Motr, Ber. Dtsch. Keram. , 40:91 (1963). CHEMICAL ANALYSIS OF THE REACTION PRODUCTS OF BORON WITH ARSENIC AND PHOSPHOR US A. A. Reshchikova and Z. S. Medvedeva N. S. Kurnakov Institute of General and Inorganic Chemistry, Academy of Sciences of the USSR Boron arsenides and phosphides are refractory compounds offering certain uses in semiconductor technology. The synthesis of these compounds has been a matter of great concern in the Soviet Union and elsewhere over the last few years [10]; however, very little has appeared in the literature regarding the chemical analysis of these substances [1, 9, 12].

2. G. A. Goryunova, Chemistry of Diamond-Like Semiconductors [in Russian], Izd. LGU, Leningrad (1963). O. Kubashewski and B. Hopkins, Oxidation of Metals and Alloys [Russian translation], IL, Moscow (1955). 1. N. Frantsevich, R. F. Voitovich, and V. N. SSR, Kiev (1963). H. Schafer, Chemical Gas-Transport Reactions [Russian translation], Mir, Moscow (1964). 3. 4. 5. HIGH-TEMPERATURE OXIDATION RESISTANCE OF REFRACTORY SILICON NITRIDE-SILICON CARBIDE MATERIALS I. N. Godovannaya and o. I. Popov a Institute of Problems in Materials Science, Academy of Sciences of the Ukrainian SSR Silicon nitride and carbide are promising materials for use as refractories; they are highly resistant to mineral acids and alkalis, have a high melting point, and are thermally very stable [1].

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